Simulation of ion irradiation of Silicon Carbide

Silicon Carbide (SiC) is a promising material for several applications such as nuclear application, electronic and space application. Characterizing and understanding radiation effects and damage creation is crucial for materials application in nuclear. Radiation defects can be studied not only by experiments but also by simulations methods. In the talk, the possible simulation tools to study ion irradiation damage in SiC, like TRIM and LAMMPS will be described.